t4 - lds - 0160, rev . 2 (111541) ?2011 microsemi corporation page 1 of 6 1n5283 ur - 1 thru 1n5314 ur -1 available on commercial versions current regulator diodes qualified per mil -prf- 19500/463 qua l ified levels: jan, jantx, jantxv and jans description the popular 1n5283 ur - 1 thru 1n5314ur - 1 series of 0.5 watt current regulators provides a selection from 0.22 ma to 4.7 ma in standard 10% tolerances. these devices regul ate current over a broad voltage range as a counter part offering to zeners (that regulate voltage over a broad current range ). the do - 213ab package offers a double plug internal bond connection with a large die element for its unique function as a current limiter. microsemi also offers numerous other zener products to meet higher and lower power voltage regulation applications. do - 213ab (melf, ll41) package also available in : do -7 p ackage ( axial -l eaded ) 1n5283 - 1 to 1n5314 -1 important: for the latest infor mation, visit our website http://www.microsemi.com . features ? jedec registered surface mount equivalent of 1n5 283 thru 1n5 314 series . ? high source impedance. ? internal metallurgical bond . ? jan, jantx, jantxv , and jans qualification s are available per mil - prf - 19500/463 . ? chips also available as janhc and jankc . ? rohs compliant versions available (commercial grade only) . applications / benefits ? double - plug construction. ? regulates current over a broad operating voltage and temperature range . ? extensive selection from 0.22 ma to 4.7 ma. ? standard current tolerances are plus/minus 10%. ? non - sensitive to esd. ? inherently radiation hard as described in microsemi micronote 050 . m axim um ratings msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.mi crosemi.com parameters/test conditions symbol value unit junction and storage temp erature t j and t stg - 65 to +175 o c thermal resistance junction - to - end cap @ l = 0 in r ? j ec 10 0 o c /w thermal impedance z ? jx 25 o c /w steady - state power dissipation @ t ec = + 125 o c, (1) p d 500 mw working peak voltage v wm 100 v solder pad temperature @ 10 s max. t sp 260 o c notes : 1. derate at 10 mw / c above + 125 o c. downloaded from: http:///
t4 - lds - 0160, rev . 2 (111541) ?2011 microsemi corporation page 2 of 6 1n5283 ur - 1 thru 1n5314 ur -1 mechanical a nd packaging ? case: hermetically sealed glass case . ? terminal s: tin/ l ead finished c opper clad steel or rohs compliant matte - tin finish available (commercial grade only). ? marking: cathode band. ? polarity: diode to be operated with the banded (cathode) en d negative. ? mounting surface selection: the axial coefficient of expansion (coe) of this device is approximately +6ppm/c. the coe of the mounting surface system should be selected to provide a suitable match with this device. ? w eight: 0.2 grams . ? see p ackage d imensions on last page. part nomenclature jan 1n5 283 ur -1 (e3) reliability level jan = jan level jantx = jant x level jantxv = jantx v level jans = jans level blank = commercial jedec type number (s ee e lectrical characteristic s t able ) rohs compliance e3 = rohs compliant ( available on commercial grade only ) blank = non - rohs compliant metallurgical ly bond ed surface mount package type symbols & definiti ons symbol definition i l limiting current: a specified current below the lower knee of the current - regulating characteristic. i s regulator current: a current within the regulating range of a current - regulator diode. p d power dissipation: the power dissipation, dc. r ?jl thermal resistance junction - to - lead: the thermal resistance from the virtual junction(s) of a semiconducter device to the lead. t l lead temperature: the temperature of a lead terminal. t sp temperature solder pad: the maximum solder temperature that can be safely applied to the terminal. v k knee voltage: a specified regulator voltage near the lower knee of the current - regulating characteristic. v l limiting voltage: the voltage at point i l on the current - voltage characteristic. v s regulator vo ltage : a voltage within the regulating range of a current - regulating diode. z k knee impedance: the small - signal impedance at operating point vk on the current - voltage characteristic. z s regulator impedance: the small - signal impedance within the regula ting range of a current - regulator diode. z ?jx thermal impedance: the thermal impedance junction to reference point. downloaded from: http:///
t4 - lds - 0160, rev . 2 (111541) ?2011 microsemi corporation page 3 of 6 1n5283 ur - 1 thru 1n5314 ur -1 electrical characteristics (t a = 25c, unless otherwise specified) type number regulator current l s (ma) @ v s = 25 v minimum dynamic impedance @v s = 25 v z s (m ? ) (note 1) minimum knee impedance @v k = 6.0 v z k (m ? ) (note 2) maximum limit ing voltage @ l l = 0.8 l s (min) v l (v olts ) nom min ma x 1n5283 ur 1n5284 ur 1n5285 ur 1n5286 ur 1n5287 ur 0.22 0.24 0.27 0.30 0.33 0.198 0.216 0.2 43 0.270 0.297 0.242 0.264 0.297 0.330 0.363 25.0 0 19.0 0 14.0 0 9.0 00 6.6 00 2.75 0 2.35 0 1.95 0 1.60 0 1.35 0 1.00 1.00 1.00 1.00 1.00 1n5288 ur 1n5289 ur 1n5290 ur 1n5291 ur 1n5292 ur 0.39 0.43 0.47 0.56 0.62 0.351 0.387 0.423 0.504 0.558 0.429 0.473 0.517 0.616 0 .682 4.10 0 3.30 0 2.70 0 1.90 0 1.55 0 1.00 0 0.870 0.750 0.560 0.470 1.05 1.05 1.05 1.10 1.13 1n5293 ur 1n5294 ur 1n5295 ur 1n5296 ur 1n5297 ur 0.68 0.75 0.82 0.91 1.00 0.612 0.675 0.738 0.819 0.900 0.748 0.825 0.902 1.001 1.100 1.35 0 1.15 0 1.00 0 0.880 0.800 0.400 0.335 0.290 0.240 0.205 1.15 1.20 1.25 1.29 1.35 1n5298 ur 1n5299 ur 1n5300 ur 1n5301 ur 1n5302 ur 1.10 1.20 1.30 1.40 1.50 0.990 1.08 0 1.17 0 1.26 0 1.35 0 1.210 1.32 0 1.43 0 1.54 0 1.65 0 0.700 0.640 0.580 0.540 0.510 0.180 0.155 0.135 0.115 0.105 1.40 1.45 1.50 1.55 1.60 1n5303 ur 1n5304 ur 1n5305 ur 1n5306 ur 1n5307 ur 1.60 1.80 2.00 2.20 2.40 1.44 0 1.62 0 1.80 0 1.98 0 2.16 0 1.76 0 1.98 0 2.20 0 2.42 0 2.64 0 0.475 0.420 0.395 0.370 0.345 0.092 0.074 0.061 0.052 0.044 1.65 1.75 1.85 1.95 2.00 1n5308 ur 1n5309 ur 1n5310 ur 1n5311 ur 1n5312 ur 2.70 3.00 3.30 3.60 3.90 2.43 0 2.70 0 2.97 0 3.24 0 3.51 0 2.97 0 3.30 0 3.63 0 3.96 0 4.29 0 0.320 0.300 0.280 0.265 0.255 0.035 0.029 0.024 0.020 0.017 2.15 2.25 2.35 2.50 2.60 1n5313 ur 1n5314 ur 4.30 4.70 3.87 0 4.23 0 4.73 0 5.17 0 0.245 0.235 0.014 0.012 2.75 2.90 note 1: z s is derived by superimpos i ng a 90 hz rms signal equal to 10% of v s on v s. note 2: z k is derived by superimposin g a 90 hz rms signal equal to 10% of v k on v k. downloaded from: http:///
t4 - lds - 0160, rev . 2 (111541) ?2011 microsemi corporation page 4 of 6 1n5283 ur - 1 thru 1n5314 ur -1 graphs figure 1 C current - regulator char acteristics i s nominal pinch - off current (ma) figure 2 C temperature coefficient t c temperature coefficient (% / c) downloaded from: http:///
t4 - lds - 0160, rev . 2 (111541) ?2011 microsemi corporation page 5 of 6 1n5283 ur - 1 thru 1n5314 ur -1 graphs (continued) i s n ominal pinch - off current (ma) figure 3 C temperature coefficient i s nominal pinch - off current (ma) fig ure 4 C current regulation factor t c temperature 3 i p current change (ma) downloaded from: http:///
t4 - lds - 0160, rev . 2 (111541) ?2011 microsemi corporation page 6 of 6 1n5283 ur - 1 thru 1n5314 ur -1 package dimensions sy mbol d ime n si ons i nc h m illime ters min max min max bd 0.94 .105 2.39 2.67 bl .189 .205 4.80 5.21 ect .016 .022 0.41 0.55 s .001 min 0.03 min not es: 1 . dimen sio ns are in in ch es. 2 . m illim ete rs a re gi ven fo r ge ne ral in for ma t io n onl y. 3 . in ac co rd an ce wi th as me y 14 .5m, diame ters a re eq uival en t to x s ym bo l og y. downloaded from: http:///
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